Dopant incorporation studies in silicon molecular beam epitaxy (Si MBE)
- 31 July 1982
- journal article
- Published by Elsevier in Applications of Surface Science
- Vol. 11-12, 517-527
- https://doi.org/10.1016/0378-5963(82)90096-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxyJournal of Applied Physics, 1981
- Si–MBE: Growth and Sb dopingJournal of Vacuum Science and Technology, 1979
- Arbitrary doping profiles produced by Sb-doped Si MBEApplied Physics Letters, 1978
- Acceptor dopants in silicon molecular-beam epitaxyJournal of Applied Physics, 1977
- Chemisorption of indium on (111) silicon substrates: II. Adsorption by flash desorption technique — Adsorption energySurface Science, 1974
- A study of phosphorus adsorption and desorption kinetics on silicon (111) surfacesJournal of Crystal Growth, 1972
- A feedback method for investigating carrier distributions in semiconductorsIEEE Transactions on Electron Devices, 1972
- Work Function Variation of Metals Coated by Metallic FilmsJournal of Applied Physics, 1962