Void induced thermal impedance in power semiconductor modules: some transient temperature effects
- 13 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 3, 1905-1911
- https://doi.org/10.1109/ias.2001.955790
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Evaluation of structural degradation in packaged semiconductor components using a transient thermal characterisation techniquePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Thermal impact of solder voids in the electronic packaging of power devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Direct measurement and analysis of the time-dependent evolution of stress in silicon devices and solder interconnections in power assembliesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Characterisation of die attach for power devices using thermal impedance measurement practice and experimentPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Thermomechatronics of power electronic packagesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Reliability studies of two flip-chip BGA packages using power cycling testMicroelectronics Reliability, 2001
- Analysis of thermal transient data with synthesized dynamic models for semiconductor devicesIEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A, 1995
- Energy based methodology for damage and life prediction of solder joints under thermal cyclingIEEE Transactions on Components, Packaging, and Manufacturing Technology: Part B, 1994