Comparison of polysilicon films annealed with a CW or pulsed laser
- 1 January 1983
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 12 (1), 143-159
- https://doi.org/10.1007/bf02651640
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Surface Stabilization of Polycrystalline‐Silicon Films during Laser RecrystallizationJournal of the Electrochemical Society, 1981
- Laser Processing of Ion Implanted Semiconductor Materials for Device ApplicationsIEEE Transactions on Nuclear Science, 1981
- Crystal structure and thermal oxidation of laser-recrystallized polycrystalline siliconApplied Physics Letters, 1980
- ELECTRICAL CHARACTERISTICS OF LASER-ANNEALED POLYSILICON RESISTORS FOR DEVICE APPLICATIONSPublished by Elsevier ,1980
- Resistivity changes in laser-annealed polycrystalline silicon during thermal annealingApplied Physics Letters, 1979
- Pulsed-laser annealing of ion-implanted polycrystalline silicon filmsApplied Physics Letters, 1979
- cw laser anneal of polycrystalline silicon: Crystalline structure, electrical propertiesApplied Physics Letters, 1978