Laser Processing of Ion Implanted Semiconductor Materials for Device Applications
- 1 April 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 28 (2), 1754-1758
- https://doi.org/10.1109/tns.1981.4331514
Abstract
Both pulsed and CW lasers have been used to anneal ion implanted single crystal silicon, polysilicon and ion implanted devices. The advantages and limitations of each type of laser and laser processing in general is discussed. Our results and those in the literature are compared to conventional thermal anneals. The thermal stability of ion-implanted, laser-annealed, single crystal silicon and polysilicon is reported.Keywords
This publication has 10 references indexed in Scilit:
- Stability study of laser irradiation of silicon diffused with arsenicApplied Physics Letters, 1980
- Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in siliconJournal of Applied Physics, 1980
- Short-channel polysilicon-gate m.o.s.f.e.t.s fabricated by c.w. argon laser annealing of arsenic-implanted source and drainElectronics Letters, 1980
- Short-channel MOS FET’s fabricated by self-aligned ion implantation and laser annealingApplied Physics Letters, 1979
- Pulsed-laser annealing of ion-implanted polycrystalline silicon filmsApplied Physics Letters, 1979
- Effects of pulsed ruby-laser annealing on As and Sb implanted siliconJournal of Applied Physics, 1979
- Electrical conduction in implanted polycrystalline siliconJournal of Electronic Materials, 1979
- Leakage studies in high-density dynamic MOS memory devicesIEEE Transactions on Electron Devices, 1979
- The evolution of digital electronics towards VLSIIEEE Transactions on Electron Devices, 1979
- cw laser anneal of polycrystalline silicon: Crystalline structure, electrical propertiesApplied Physics Letters, 1978