MBE-grown HgCdTe multi-layer heterojunction structures for high speed low-noise 1.3–1.6 µm avalanche photodetectors
- 1 June 1997
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 26 (6), 488-492
- https://doi.org/10.1007/s11664-997-0182-9
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Temperature measurements of separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APD's)IEEE Photonics Technology Letters, 1993
- HgCdTe double heterostructure for infrared injection laserJournal of Crystal Growth, 1993
- HgCdTe infrared diode lasers grown by MBESemiconductor Science and Technology, 1993
- Bias-switchable dual-band HgCdTe infrared photodetectorJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Energy gap versus alloy composition and temperature in Hg1−xCdxTeJournal of Applied Physics, 1982
- Bandgap spin-orbit splitting resonance effects in Hg1-xCdxTe alloysJournal of Crystal Growth, 1982
- Anomalous Electrical Properties of p-Type Hg1−xCdxTeJournal of Applied Physics, 1971