Incoherent light-induced diffusion of arsenic into silicon from a spin-on source
- 15 September 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (6), 582-584
- https://doi.org/10.1063/1.94433
Abstract
A new approach to impurity diffusion in semiconductors based on the use of a spin-on source and short-time incoherent light exposure has been developed and experimentally investigated for arsenic diffusion into silicon. Arsenic-doped oxide films, ∼0.19 μm thick, were spin-on deposited onto 〈100〉 oriented silicon crystals and heated with radiation from a xenon lamp to temperatures between 950 and 1200 °C for times of 10 and 25 s. Arsenic diffused layers tested with resistivity measurements and Rutherford backscattering analysis were characterized by a maximum surface concentration ∼1×1020 atom/cm3 and a maximum depth ∼0.40 μm.Keywords
This publication has 8 references indexed in Scilit:
- Annealing of arsenic-and antimony-implanted silicon single crystals using A CW xenon arc lampRadiation Effects, 1983
- Rapid isothermal anneal of 75As implanted siliconApplied Physics Letters, 1982
- Annealing of Antimony Implanted Silicon with Halogen Lamp IrradiationPhysica Status Solidi (a), 1982
- Rapid isothermal annealing of ion implantation damage using a thermal radiation sourceApplied Physics Letters, 1981
- Activation of arsenic-implanted silicon using an incoherent light sourceApplied Physics Letters, 1981
- Arsenic-implanted Si layers annealed using a cw Xe arc lampApplied Physics Letters, 1981
- Radiation Annealing of Boron-Implanted Silicon with a Halogen LampJapanese Journal of Applied Physics, 1980
- RBS and channelling analysis of As and Ga in laser doped siliconNuclear Instruments and Methods, 1980