The Influence of Dislocation Density on the Uniformity of Electrical Properties of Si Implanted, Semi-Insulating LEC-GaAs
- 1 May 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (5A), L270
- https://doi.org/10.1143/jjap.22.l270
Abstract
The electrical homogeneity of the Si implanted layer in LEC-grown, semi-insulating GaAs was investigated by Hall measurements. Variations in electrical properties across the substrate were compared with dislocation density distribution. An M-shaped sheet resistance and a W-shape sheet carrier concentration variation across the substrate were closely correlated with a W-shaped dislocation density distribution. Almost uniform electrical properties, except for the wafer periphery, were verified for the substrate having a U-shaped dislocation density distribution.Keywords
This publication has 12 references indexed in Scilit:
- Correlation between Dislocation Distribution and FET Performances Observed in Low Cr Doped LEC GaAsJapanese Journal of Applied Physics, 1983
- Role of Dislocations in Semi-Insulation Mechanism in Undoped LEC GaAs CrystalJapanese Journal of Applied Physics, 1982
- Spatially Resolved Cathodoluminescence Study of Semi‐Insulating GaAs SubstratesJournal of the Electrochemical Society, 1982
- Characterization of horizontal Bridgman-grown semi-insulating GaAs for ion implantationSolid-State Electronics, 1982
- Leakage Current IL Variation Correlated with Dislocation Density in Undoped, Semi-Insulating LEC-GaAsJapanese Journal of Applied Physics, 1982
- Inhomogeneity in Semi-Insulating GaAs Revealed by Scanning Leakage Current MeasurementsJapanese Journal of Applied Physics, 1982
- Inhomogeneous GaAs FET Threshold Voltages Related to Dislocation DistributionJapanese Journal of Applied Physics, 1982
- Characterization of Nonuniformity in Semi-Insulating LEC GaAs by Photoluminescence SpectroscopyJapanese Journal of Applied Physics, 1982
- One‐Dimensional Photoluminescence Distribution in Semi‐Insulating GaAs Grown by CZ and HB MethodsJournal of the Electrochemical Society, 1982
- Photoluminescence at Dislocations in GaAsPhysical Review Letters, 1974