On the temperature dependent cyclotron resonance lineshape of inversion-layer electrons in Si
- 30 November 1977
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 24 (6), 439-441
- https://doi.org/10.1016/0038-1098(77)91312-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- On the cyclotron resonance width of an electron impurity system in two dimensionsSolid State Communications, 1977
- Temperature-Dependent Cyclotron Mass of Inversion-Layer Electrons in SiPhysical Review Letters, 1975
- Frequency-Dependent Cyclotron Effective Masses in Si Inversion LayersPhysical Review Letters, 1975
- Theory of Cyclotron Resonance Lineshape in a Two-Dimensional Electron SystemJournal of the Physics Society Japan, 1975
- Proper-connected-diagram expansion of electrical conductivity for electron-impurity systemInternational Journal of Theoretical Physics, 1969
- Theory of Cyclotron Resonance WidthJournal of the Physics Society Japan, 1968
- Statistical-Mechanical Theory of Irreversible Processes. I. General Theory and Simple Applications to Magnetic and Conduction ProblemsJournal of the Physics Society Japan, 1957