Deposition and characterization of diamond epitaxial thin films on silicon substrates
- 1 December 1993
- journal article
- surface physics-1993
- Published by Springer Nature in Applied Physics A
- Vol. 57 (6), 483-489
- https://doi.org/10.1007/bf00331746
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Epitaxial diamond thin films on (001) silicon substratesApplied Physics Letters, 1993
- Heteroepitaxial diamond growth on (100) siliconDiamond and Related Materials, 1993
- The effect of substrate bias voltage on the nucleation of diamond crystals in a microwave plasma assisted chemical vapor deposition processDiamond and Related Materials, 1993
- Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor depositionApplied Physics Letters, 1992
- Large-area mosaic diamond films approaching single-crystal qualityApplied Physics Letters, 1991
- Texture formation in polycrystalline diamond filmsJournal of Applied Physics, 1990
- Diamond electronic devices-a critical appraisalSemiconductor Science and Technology, 1989
- Formation of Uniform Solid-Phase Epitaxial CoSi2 Films by Patterning MethodJapanese Journal of Applied Physics, 1985
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- The Raman effect in crystalsAdvances in Physics, 1964