Low-temperature in situ preparation of ferroelectric Pb(Zr0.55Ti0.45)O3 thin films by reactive sputtering
- 25 October 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (17), 2345-2347
- https://doi.org/10.1063/1.110521
Abstract
Ferroelectric thin films with a composition Pb(Zr0.55Ti0.45)O3 have been prepared on Pt‐coated Si substrates by a reactive sputtering technique at substrate temperatures as low as 250 °C. By means of x‐ray diffraction, titanium zirconium oxide was identified as one of the reaction products. Based on this fact, a possible Pb(Zr,Ti)O3 formation mechanism has been proposed. X‐ray diffraction patterns of these films show nearly no pyrochlore phase. Ferroelectric hysteresis loops show a remanent polarization of 25.6 μC/cm2 and a coercive field of 17.1 kV/cm.Keywords
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