Resonant tunneling and intrinsic bistability in asymmetric double-barrier heterostructures
- 10 October 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (15), 1408-1410
- https://doi.org/10.1063/1.99956
Abstract
We report measurements of the current-voltage characteristics of an asymmetric GaAs/AlGaAs double-barrier resonant tunneling device. The structure was designed to increase the space charge in the well under forward bias and consequently enhance the electrostatic feedback that leads to intrinsic bistability. The magnetotunneling data demonstrate unambiguously that the observed bistability is the property of the device, rather than the biasing circuit.Keywords
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