Comments on static negative resistance in avalanching silicon p + -i-n + junctions
- 1 November 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 16 (11), 970-972
- https://doi.org/10.1109/T-ED.1969.16893
Abstract
The dependence of calculated static space-charge-induced negative resistance, in avalanching silicon diodes, upon the form of the ionization rate function is investigated. It is shown that the conversion efficiency calculated using a commonly employed function for the ionization rate is greatly overestimated. It is concluded that the mechanism of static space-charge-induced negative resistance is not the origin of high efficiency modes of oscillation.Keywords
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