Resistance switching in the metal deficient-type oxides: NiO and CoO
- 2 July 2007
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 91 (1)
- https://doi.org/10.1063/1.2753101
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodesApplied Physics Letters, 2006
- Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal OxidesJapanese Journal of Applied Physics, 2006
- Study on the resistive switching time of TiO2 thin filmsApplied Physics Letters, 2006
- High-Speed Resistive Switching of TiO2/TiN Nano-Crystalline Thin FilmJapanese Journal of Applied Physics, 2006
- Valence states of Cr and the insulator-to-metal transition in Cr-dopedPhysical Review B, 2005
- Study of Transport and Dielectric of Resistive Memory States in NiO Thin FilmJapanese Journal of Applied Physics, 2005
- Resistive switching mechanism of TiO2 thin films grown by atomic-layer depositionJournal of Applied Physics, 2005
- Identification of a determining parameter for resistive switching of TiO2 thin filmsApplied Physics Letters, 2005
- Reproducible resistance switching in polycrystalline NiO filmsApplied Physics Letters, 2004
- Electric-pulse-induced reversible resistance change effect in magnetoresistive filmsApplied Physics Letters, 2000