Aluminium epitaxy on Si(111) and Si(100) using an ionized cluster beam
- 1 February 1985
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 124 (3-4), 179-184
- https://doi.org/10.1016/0040-6090(85)90263-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Vaporized-metal cluster formation and effect of kinetic energy of ionized clusters on film formationThin Solid Films, 1982
- Effect of Growth Temperature on Si MBE FilmJapanese Journal of Applied Physics, 1981
- Crystalline and Electrical Characteristics of Silicon Films Deposited by Ionized-Cluster-BeamsJapanese Journal of Applied Physics, 1980
- SLT Device Metallurgy and its Monolithic ExtensionIBM Journal of Research and Development, 1969