Effect of Growth Temperature on Si MBE Film
- 1 April 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (4)
- https://doi.org/10.1143/jjap.20.703
Abstract
The dependence of Si MBE film on growth temperature is studied by means of reflection high-energy electron diffraction, Rutherford backscattering and Auger electron spectroscopy. It is found that above 680°C, high-quality epitaxial film can be grown even without intentional preheating by not removing the surface oxide formed during chemical cleaning of the substrate. The surface oxide protects the substrate surface from contamination, and should be removed immediately before growth. In addition, structural imperfections in Si films grown at lower temperatures are observed.Keywords
This publication has 10 references indexed in Scilit:
- Persistence of Si(111)7 × 7 surface structure under air exposureSurface Science, 1980
- Silicon molecular beam epitaxy with simultaneous ion implant dopingJournal of Applied Physics, 1980
- Progress in surface crystallographySurface Science, 1979
- Chemisorption of chlorine on Si(111) 7 × 7 and 1 × 1 surfacesPhysical Review B, 1977
- Acceptor dopants in silicon molecular-beam epitaxyJournal of Applied Physics, 1977
- The growth and structure of semiconducting thin filmsReports on Progress in Physics, 1974
- Silicon Cleaning with Hydrogen Peroxide Solutions: A High Energy Electron Diffraction and Auger Electron Spectroscopy StudyJournal of the Electrochemical Society, 1972
- Carbide Contamination of Silicon SurfacesJournal of Applied Physics, 1971
- Kinetics of the induction period for the nucleation of silicon on (111) silicon substrates at U.H.V.Philosophical Magazine, 1970
- A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviourPhilosophical Magazine, 1967