Structure of Si(111) surfaces etched in 40% NH4F: Influence of the doping
Open Access
- 1 January 1994
- journal article
- Published by EDP Sciences in Microscopy Microanalysis Microstructures
- Vol. 5 (4-6), 291-299
- https://doi.org/10.1051/mmm:0199400504-6029100
Abstract
Microscopy Microanalysis Microstructures, a publication of the Société Française des MicroscopiesKeywords
This publication has 9 references indexed in Scilit:
- The Mechanism of the Anodic Oxidation of Silicon in Acidic Fluoride Solutions RevisitedBerichte der Bunsengesellschaft für physikalische Chemie, 1993
- Anisotropic etching versus interaction of atomic steps: Scanning tunneling microscopy observations on HF/NH4F-treated Si(111)Journal of Applied Physics, 1993
- In Situ STM Imaging of Silicon(111) in HF under Potential ControlJournal of the Electrochemical Society, 1992
- Step-flow mechanism versus pit corrosion: scanning-tunneling microscopy observations on wet etching of Si(111) by HF solutionsChemical Physics Letters, 1991
- Chemical etching of vicinal Si(111): Dependence of the surface structure and the hydrogen termination on the pH of the etching solutionsThe Journal of Chemical Physics, 1991
- In Situ Fourier‐Transform Electromodulated Infrared Study of Porous Silicon Formation: Evidence for Solvent Effects on the Vibrational LinewidthsJournal of the Electrochemical Society, 1991
- Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphologyApplied Physics Letters, 1988
- The electrochemical behaviour of n‐type silicon (111)‐surfaces in fluoride containing aqueous electrolytesBerichte der Bunsengesellschaft für physikalische Chemie, 1987
- Unusually Low Surface-Recombination Velocity on Silicon and Germanium SurfacesPhysical Review Letters, 1986