Comparative study of the Si(111)✓3x✓3-Ga and -Al surfaces by angle-resolved ultraviolet photoelectron spectroscopy
- 30 November 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 56 (8), 681-685
- https://doi.org/10.1016/0038-1098(85)90778-1
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Angle-resolved ultraviolet-photoelectron-spectroscopy study of the-Al surfacePhysical Review B, 1985
- Surface states on Si(111)√3¯×√3¯-In: Experiment and theoryPhysical Review B, 1985
- -Al: An Adatom-Induced ReconstructionPhysical Review Letters, 1984
- Angle-resolved ultraviolet photoemission study of Si(111) 7 × 7 and 1 × 1 surfacesSolid State Communications, 1981
- Superstructures of submonolayer indium films on silicon (111)7 surfacesApplied Physics Letters, 1979
- Electron energy loss spectroscopy of the Si(111)—simple-metal interfacePhysical Review B, 1977
- Surface spectroscopy of Schottky-barrier formation on Si(111) 7 × 7: Photoemission studies of filled surface states and band bendingPhysical Review B, 1976
- Covalent bonding of metal atoms at the Schottky-barrier interface of GaAs, Ge, and SiJournal of Vacuum Science and Technology, 1976
- Abstract: Metal‐induced extrinsic surface states on Si, Ge, and GaAsJournal of Vacuum Science and Technology, 1976
- Chemisorption and Schottky barrier formation of Ga on Si(111) 7×7Journal of Vacuum Science and Technology, 1976