Suppression of thermal donor formation in heavily doped n-type silicon
- 15 June 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (12), 5145-5147
- https://doi.org/10.1063/1.335248
Abstract
It is found by deep level transient spectroscopy (DLTS) that the oxygen thermal donor formation is suppressed in Czochralski silicon doped with donor impurities more than 1×1016 cm−3. The result is explained by a new model considering electron‐hole equilibrium. The dopant concentration dependence of the thermal donor formation is analyzed, based on the model, and it is concluded that the thermal donor is a doubly charged donor.Keywords
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