Novel relaxation process in strained Si/Ge superlattices grown on Ge (001)
- 8 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (15), 1496-1498
- https://doi.org/10.1063/1.103375
Abstract
A new mode of misfit defect formation has been observed for the first time in high quality Si/Ge strained-layer superlattices grown by molecular beam epitaxy on Ge(001). In order to investigate the transition from coherent to incoherent growth we have studied a set of samples with a varying number of superlattice periods by transmission electron microscopy. High-resolution lattice imaging reveals that strain relaxation occurs through successive glide of 90° (a/6)〈211〉 Shockley partial dislocations on adjacent {111} planes. The resulting microtwins represent the only relaxation mechanism we observed in the samples.This publication has 12 references indexed in Scilit:
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