Growth conditions and morphological pecularities of gallium phosphide whiskers obtained by thermal evaporation in vacuum
- 16 December 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 8 (2), 521-529
- https://doi.org/10.1002/pssa.2210080222
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Morphology of gallium phosphide crystals grown by VLS mechanism with gallium as liquid-forming agentJournal of Crystal Growth, 1968
- POLYMORPHISM IN VACUUM-DEPOSITED GaP FILMSApplied Physics Letters, 1968
- Whisker Crystals of Gallium Arsenide and Gallium Phosphide Grown by the Vapor—Liquid—Solid MechanismJournal of Applied Physics, 1965
- Extinction Contours in WhiskersJournal of Applied Physics, 1965
- The growth of semiconductor crystals from solution using the twin-plane reentrant-edge mechanismJournal of Physics and Chemistry of Solids, 1964
- [Russian Text Ignored]Physica Status Solidi (b), 1964
- The spiral growth of crystalsUspekhi Fizicheskih Nauk, 1961
- Vapor Phase Preparation of Gallium Phosphide CrystalsJournal of the Electrochemical Society, 1961