Effect of the spin split-off band on optical absorption in p-type Ga1−xInxAsyP1−y quantum-well infrared detectors

Abstract

Experimental investigations of p-type ${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$ ${\mathrm{In}}_{\mathit{x}}$ ${\mathrm{As}}_{\mathit{y}}$ ${\mathrm{P}}_{1\mathrm{-}\mathit{y}}$ quantum-well intersubband photodetectors (QWIP’s) led to the discovery of unique features in photoresponse spectra of these devices. In particular, the strong 2–5-μm photoresponse of these QWIP’s was not anticipated based on previous experimental and theoretical results for p-type GaAs/${\mathrm{Al}}_{\mathit{x}}$ ${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As QWIP’s. Our theoretical modeling of p-type QWIP’s based on the ${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$ ${\mathrm{In}}_{\mathit{x}}$ ${\mathrm{As}}_{\mathit{y}}$ ${\mathrm{P}}_{1\mathrm{-}\mathit{y}}$ system revealed that the intense short-wavelength photoresponse was due to a much stronger coupling to the spin-orbit split-off components in the continuum than occurs for GaAs/${\mathrm{Al}}_{\mathit{x}}$ ${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As QWIP’s. Due to the strong influence of the spin split-off band, an eight-band Kane Hamiltonian was required to accurately model the measured photoresponse spectra. This theoretical model is first applied to a standard p-type GaAs/${\mathrm{Al}}_{0.3}$ ${\mathrm{Ga}}_{0.7}$As QWIP, and then to a series of GaAs/${\mathrm{Ga}}_{0.51}$ ${\mathrm{In}}_{0.49}$P, GaAs/${\mathrm{Ga}}_{0.62}$ ${\mathrm{In}}_{0.38}$ ${\mathrm{As}}_{0.22}$ ${\mathrm{P}}_{0.78}$, ${\mathrm{Ga}}_{0.79}$ ${\mathrm{In}}_{0.21}$ ${\mathrm{As}}_{0.59}$ ${\mathrm{P}}_{0.41}$/${\mathrm{Ga}}_{0.51}$ ${\mathrm{In}}_{0.49}$P, and

Keywords

• QUANTUM WELL

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