An analytical a-Si:H TFT DC/capacitance model using an effective temperature approach for deriving a switching time model for an inverter circuit considering deep and tail states
- 1 July 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (7), 1169-1178
- https://doi.org/10.1109/16.293344
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
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