Atomic structure of the epitaxial Al–Si interface
- 1 June 1986
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 53 (6), 833-841
- https://doi.org/10.1080/01418618608245295
Abstract
The atomic structure of the Al–Si epitaxial interface has been investigated by high-resolution transmission electron microscopy combined with computer image-simulation techniques. A stable epitaxial structure was observed at the Al(111)–Si(111) interface with a matching of four Al to three Si lattice planes, corresponding to a misfit of 30%. The formation of an epitaxial interface with such a large misfit is unexpected and its Occurrence can be attributed to the optimum energy of this interface. Atomic models consistent with these observations are proposed.Keywords
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