Large current SiC power devices for automobile applications
- 1 June 2010
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 18, 1023-1026
- https://doi.org/10.1109/ipec.2010.5542036
Abstract
The high current SiC MOSFETs and high-temperature operation IPM with SiC MOSFETs were fabricated. 300A switching in inductive load circuits was performed using a single chip SiC trench MOSFET. And 250°C (the junction temperature of SiC DMOSFETs) operation of SiC IPMs with a new high-temperature bonding method and high-temperature materials (case, encapsulation) was successfully performed.Keywords
This publication has 6 references indexed in Scilit:
- Characterization of in-grown stacking faults in 4H–SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodesApplied Physics Letters, 2005
- Status and prospects for SiC power MOSFETsIEEE Transactions on Electron Devices, 2002
- SiC Integrated MOSFETsPhysica Status Solidi (a), 1997
- Nitridation of silicon-dioxide films grown on 6H silicon carbideIEEE Electron Device Letters, 1997
- High performance of high-voltage 4H-SiC Schottky barrier diodesIEEE Electron Device Letters, 1995
- High-voltage (>1 kV) SiC Schottky barrier diodes with low on-resistancesIEEE Electron Device Letters, 1993