High-brightness InGaAlP green light-emitting diodes
- 12 October 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (15), 1775-1777
- https://doi.org/10.1063/1.108423
Abstract
Candela class InGaAlP surface-emission green light-emitting diodes (LEDs) have been successfully fabricated. The growth of InGaAlP on an intentionally misoriented substrate improved emission properties, as confirmed by a quantitative estimation of the diffusion length in the active material. A Bragg reflector using InGaAlP was realized for the first time. A new device structure, including this Bragg reflector, drastically improved the light extraction efficiency. An external quantum efficiency of 0.7% at 573 nm green light was obtained, corresponding to a luminous intensity of 2 cd.Keywords
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