Effects of implantation and annealing on the Raman spectrum of InP and GaAs
- 31 December 1981
- journal article
- Published by Elsevier in Applications of Surface Science
- Vol. 9 (1-4), 2-13
- https://doi.org/10.1016/0378-5963(81)90021-0
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Laser-induced recrystallization and damage in GaAsApplied Physics Letters, 1979
- Infrared reflection of ion-implanted GaAsJournal of Applied Physics, 1974
- Infrared Localized-Vibrational-Mode Absorption of Ion-Implanted Aluminum and Phosphorous in Gallium ArsenideJournal of Applied Physics, 1971
- RAMAN SCATTERING OF ION-IMPLANTED GaAsApplied Physics Letters, 1971
- Optical Detection of Surface Damage in GaAs Induced by Argon Ion ImplantationJournal of Applied Physics, 1970
- LATTICE EXPANSION AND STRAIN IN ION-BOMBARDED GaAs AND SIApplied Physics Letters, 1970
- EFFECT OF ION-IMPLANTATION DAMAGE ON THE OPTICAL REFLECTION SPECTRUM OF GALLIUM ARSENIDEApplied Physics Letters, 1970
- Optical Reflection Studies of Damage in Ion Implanted SiliconJournal of Applied Physics, 1970
- ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN THE 1 TO 6 eV REGIONApplied Physics Letters, 1969
- Local Mode Absorption of Al and P in GaAsJournal of Applied Physics, 1966