Schottky barriers at the interface between amorphous silicon and electrolytes
- 1 April 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (4), 2848-2851
- https://doi.org/10.1063/1.326198
Abstract
A Schottky barrier forms at the interface between amorphous silicon and an electrolyte. The barrier height, φB, can be estimated from the open‐circuit photovoltage. It depends on the potential‐determining ion in solution and is a linear function of the redox potential. The magnitude of φB ranged from 1.0 to 1.7 eV for various electrolyte compositions.Keywords
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