Electronic properties of Si atomic-planar-doped GaAs/AlAs quantum well structures grown by MBE
- 3 August 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 174 (1-3), 433-438
- https://doi.org/10.1016/0039-6028(86)90448-6
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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