The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
- 1 November 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (11), L814
- https://doi.org/10.1143/jjap.20.l814
Abstract
The effect of annealing on the electrical properties of selectively doped GaAs/N-AlGaAs heterojunction structures grown by MBE has been studied. Very high electron mobility in this structure at 77 K decreased considerably after annealing at about 700°C. However, it remained at a high value even after annealing when the Si doping concentration in N-AlGaAs was reduced to about 1×1018 cm-3. These results are discussed in terms of diffusion of Si impurities doped in N-AlGaAs.Keywords
This publication has 25 references indexed in Scilit:
- High Electron Mobility Transistor LogicJapanese Journal of Applied Physics, 1981
- The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBEJapanese Journal of Applied Physics, 1981
- Enhancement-Mode High Electron Mobility Transistors for Logic ApplicationsJapanese Journal of Applied Physics, 1981
- Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction StructuresJapanese Journal of Applied Physics, 1981
- Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBEJapanese Journal of Applied Physics, 1981
- Modulation-doped MBE GaAs/n-AlxGa1-xAs MESFETsIEEE Electron Device Letters, 1981
- High mobility GaAs-AlxGa1−xAs single period modulation-doped heterojunctionsElectronics Letters, 1981
- Three period (Al,Ga)As/GaAs heterostructures with extremely high mobilitiesElectronics Letters, 1981
- Growth conditions to achieve mobility enhancement in AlxGa1−xAs-GaAs heterojunctions by m.b.e.Electronics Letters, 1980
- Two-dimensional electron gas m.e.s.f.e.t. structureElectronics Letters, 1980