Structures for improved 1.5 μm wavelength lasers grown by LP-OMVPE; InGaAs-InP strained-layer quantum wells a good candidate
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4), 731-740
- https://doi.org/10.1016/0022-0248(91)90550-o
Abstract
No abstract availableKeywords
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