Optical studies of excitons in GaInAs/InP quantum wells grown by low-pressure metal-organic vapour-phase epitaxy
- 1 June 1988
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (6), 616-619
- https://doi.org/10.1088/0268-1242/3/6/020
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Electric field dependent exciton energy and photoluminescence quenching in GaInAs/InP quantum wellsApplied Physics Letters, 1987
- Nonlinear spectroscopy in In0.53Ga0.47As/InP multiple quantum wellsApplied Physics Letters, 1987
- Nonlinear excitonic optical absorption in GaInAs/InP quantum wellsApplied Physics Letters, 1987
- Quantum-confined Stark effect in InGaAs/InP quantum wells grown by organometallic vapor phase epitaxyApplied Physics Letters, 1987
- 1.55-μm optical logic étalon with picojoule switching energy made of InGaAs/InP multiple quantum wellsApplied Physics Letters, 1987
- Optical studies of excitons in Ga0.47In0.53As/InP multiple quantum wellsApplied Physics Letters, 1987
- Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxyApplied Physics Letters, 1986
- The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulationIEEE Journal of Quantum Electronics, 1985
- GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxyApplied Physics Letters, 1985
- Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1983