High mobility, selectively doped InP/GaInAs grown by organometallic vapor phase epitaxy
- 23 November 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (21), 1735-1737
- https://doi.org/10.1063/1.98559
Abstract
Selectively doped InP/GaInAs heterostructures with electron mobilities over 100 000 cm2/V s at 9 K, 72 000 cm2/V s at 77 K, and 11 300 cm2/V s at 300 K have been grown by organometallic vapor phase epitaxy. These layers have sheet concentrations ranging from 7.5×1011 to 2×1012 cm−2. These are the highest electron mobility/sheet concentration values reported so far for GaInAs/InP heterostructures grown by any technique.Keywords
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