Experimental study of the orientation effect of GaAs MESFETs fabricated on
- 1 September 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (9), 1586-1590
- https://doi.org/10.1109/16.34216
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- External stress effect on GaAs MESFET CharacteristicsIEEE Electron Device Letters, 1987
- TiSi2thickness limitations for use with shallow junctions and SWAMI or LOCOS isolationIEEE Transactions on Electron Devices, 1986
- Monte Carlo simulation of electron transport efficiency of an InGaAs/InP hot-electron transistorIEEE Electron Device Letters, 1985
- Piezoelectric effects in GaAs FET's and their role in orientation-dependent device characteristicsIEEE Transactions on Electron Devices, 1984
- Role of the piezoelectric effect in device uniformity of GaAs integrated circuitsApplied Physics Letters, 1984
- Orientation dependence of breakdown voltage in GaAsSolid-State Electronics, 1980
- Orientation dependence of ballistic electron transport and impact ionisationElectronics Letters, 1980
- Computer-Controlled Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1974
- Symmetry of Interface Charge Distribution in Thermally Oxidized SiliconPhysical Review Letters, 1967
- EFFECT OF CRYSTAL ORIENTATION ON OXIDATION RATES OF SILICON IN HIGH PRESSURE STEAMThe Journal of Physical Chemistry, 1961