Circular buried heterostructure (CBH) GaAlAs/GaAs surface emitting lasers
- 1 June 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 23 (6), 882-888
- https://doi.org/10.1109/jqe.1987.1073444
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- GaAlAs/GaAs Surface Emitting Laser with High Reflective TiO2/SiO2 Multilayer Bragg ReflectorJapanese Journal of Applied Physics, 1987
- A Trial Fabrication of Circular Buried Heterostructure (CBH) GaAlAs/GaAs Surface Emitting Laser by Using Selective Meltback MethodJapanese Journal of Applied Physics, 1986
- Continuous wave operation of ridge waveguide AlGaAs/GaAs distributed feedback lasers with low threshold currentApplied Physics Letters, 1986
- Room temperature pulsed oscillation of GaAlAs/GaAs surface emitting junction laserIEEE Journal of Quantum Electronics, 1985
- Two-dimensional array of GaInAsP/InP surface-emitting lasersElectronics Letters, 1985
- GaInAsP/InP surface emitting injection laser with a ring electrodeIEEE Journal of Quantum Electronics, 1984
- Selective Meltbacked Substrate Inner-Stripe AlGaAs/GaAs Lasers Operated under Room Temperature CW ConditionJapanese Journal of Applied Physics, 1983
- GaInAsP/InP surface emitting injection lasers with short cavity lengthIEEE Journal of Quantum Electronics, 1983
- Lasing characteristics of improved GaInAsP/InP surface emitting injection lasersElectronics Letters, 1983
- Intensity Pulsation Enhancement by Self-Focusing in Semiconductor Injection LasersJapanese Journal of Applied Physics, 1980