Electronic energy levels of point defects at the GaSb (110) surface
- 28 February 1982
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 41 (5), 419-422
- https://doi.org/10.1016/0038-1098(82)91192-9
Abstract
No abstract availableThis publication has 38 references indexed in Scilit:
- Trends in surface atomic geometries of compound semiconductorsJournal of Vacuum Science and Technology, 1980
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- Theory of Substitutional Deep Traps in Covalent SemiconductorsPhysical Review Letters, 1980
- Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface StatesPhysical Review Letters, 1980
- Green's function and generalized phase shift for surface and interface problemsPhysical Review B, 1979
- Surface bond angle and bond lengths of rearranged As and Ga atoms on GaAs(110)Physical Review B, 1978
- Subsurface atomic displacements at the GaAs(110) surfaceJournal of Vacuum Science and Technology, 1978
- Surface and interface states of GaSb: A photoemission studyPhysical Review B, 1977
- GaSb Surfaces States and Schottky-Barrier PinningPhysical Review Letters, 1975
- Fermi Level Position at Metal-Semiconductor InterfacesPhysical Review B, 1964