Carrier concentration and activation energy in heavily donor-doped silicon
- 15 January 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (2), 591-598
- https://doi.org/10.1063/1.338210
Abstract
The Lee–McGill [J. Appl. Phys. 46, 373 (1975)] model for computing the populations in heavily doped n-type silicon is applied with several objectives. First, it is used to evaluate Neumark’s [Phys. Rev. B 5, 408 (1972(; J. Appl. Phys. 48, 3618 (1977)] expressions for screening and for the decrease of the activation energy in such systems. Next, it is used to systematically investigate the decrease in activation energy as doping density increases. Lastly, it is used to evaluate the adequacy of using dilute concentration statistics to fit experimental data.Keywords
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