Electroluminescence from Er-doped GaP
- 1 August 1994
- journal article
- letter
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (5), 584-586
- https://doi.org/10.1063/1.112985
Abstract
The electroluminescent properties of the Er‐doped GaP light‐emitting diodes prepared by metalorganic vapor phase epitaxy and diffusion were investigated. Strong characteristic Er3+ intra‐4f‐shell emission at 0.80 eV is observed over the temperature range of 12–300 K. The electroluminescence intensity is only weakly temperature dependent, decreasing less than 40% as the temperature increases from 20 to 300 K.Keywords
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