Thermal quenching properties of Er-doped GaP
- 21 March 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (12), 1537-1539
- https://doi.org/10.1063/1.111884
Abstract
The photoluminescent properties of the Er‐doped epitaxial layers of GaP prepared by metalorganic vapor phase epitaxy were studied as a function of temperature. Strong characteristic Er3+ intra‐4f‐shell emission is observed over the temperature range of 12–300 K. The integrated intensity of the 0.805‐eV emission is only weakly temperature dependent, decreasing by a factor of 2 as the temperature increases from 12 to 300 K. The observation of minimal thermal quenching indicates that Er‐doped GaP is a promising material for optical devices emitting at 1.54 μm and operating at room temperature.Keywords
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