High mobility poly-Si TFT by a new excimer laser annealing method for large area electronics
- 1 January 1991
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 563-566
- https://doi.org/10.1109/iedm.1991.235407
Abstract
A high-mobility (280 cm/sup 2//V-s), high-throughput poly-Si TFT (thin-film transistor) formed using a low-temperature process (Keywords
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