Measuring the Temperature of a Quartz Substrate during and after the Pulsed Laser-Induced Crystallization of a-Si:H
- 1 December 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (12A), L2131
- https://doi.org/10.1143/jjap.28.l2131
Abstract
Transient thermometry measurements were used to study the heat diffusion in the near-surface region of a quartz substrate when hydrogenated amorphous silicon deposited on the substrate was melted and crystallized by irradiation with a pulsed XeCl excimer laser. The use of a thin platinum layer as a temperature sensing layer made it possible to measure the rapid heat diffusion from the silicon film on the top to the underlying substrate. The substrate was heated to no more than 170°C at 800 nm below the silicon film during and after the crystallization process.Keywords
This publication has 9 references indexed in Scilit:
- Laser-induced melting of predeposited impurity doping technique used to fabricate shallow junctionsJournal of Applied Physics, 1987
- Thermal radiation from laser heated silicon and pyrometric temperature measurementsApplied Physics Letters, 1984
- Bulk nucleation and amorphous phase formation in highly undercooled molten siliconApplied Physics Letters, 1984
- Laser processing for high-efficiency Si solar cellsJournal of Applied Physics, 1982
- Synchrotron X-Ray Diffraction Study of Silicon during Pulsed-Laser AnnealingPhysical Review Letters, 1982
- Measurement of Lattice Temperature during Pulsed-Laser Annealing by Time-Dependent Optical ReflectivityJapanese Journal of Applied Physics, 1981
- Measurement of Lattice Temperature of Silicon during Pulsed Laser AnnealingPhysical Review Letters, 1981
- Efficient Si solar cells by laser photochemical dopingApplied Physics Letters, 1981
- Epitaxial regrowth of Ar implanted amorphous Si by laser annealingJournal of Applied Physics, 1980