Effect of Dislocations on Sheet Carrier Concentration of Si-Implanted, Semi-Insulating, Liquid-Encapsulated Czochralski Grown GaAs
- 1 February 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (2A), L160
- https://doi.org/10.1143/jjap.24.l160
Abstract
The quantitative effect of dislocations on the sheet carrier concentration of a Si-implanted and annealed layer in semi-insulating GaAs is investigated microscopically by the van der Pauw method using small Hall chips with a 40×40 µm2 measurement area. Dislocations affect the sheet carrier concentration within about a 75 µm radius area, and the carrier concentration increases 3×1015 cm-3 per dislocation in this area.Keywords
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