Beryllium-ion implantation in InP and In1−xGaxAsyP1−y

Abstract

Anneal temperatures ⩾700 °C are necessary to obtain maximum electrical activation of implanted Be in InP. At these temperatures, activation ≳50% is generally achievable. Both the implant temperature and implanted‐Be concentration affect p‐n junction depth and presumably, therefore, the in‐diffusion of implanted Be. For room‐temperature implants, the maximum Be concentration which showed insignificant in‐diffusion was 3×10¹⁸ cm⁻³. Using a multienergy implant schedule (highest energy 400 keV), which results in a flat as‐implanted Be concentration of ≈3×10¹⁸ cm⁻³, sheet hole concentrations as high as 2.2×10¹⁴ and 1.5×10¹⁴ cm⁻² have been obtained in InP and In_0.75Ga_0.25As_0.52P_0.48, respectively.