dc and microwave characteristics of a high current double interface GaAs/InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistor
- 21 April 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (16), 1080-1082
- https://doi.org/10.1063/1.96603
Abstract
No abstract availableKeywords
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