Schottky barriers on n-GaN grown on SiC
- 1 May 1996
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (5), 831-834
- https://doi.org/10.1007/bf02666644
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Deep level defects in n-type GaNApplied Physics Letters, 1994
- Schottky barrier on n-type GaN grown by hydride vapor phase epitaxyApplied Physics Letters, 1993
- Metal semiconductor field effect transistor based on single crystal GaNApplied Physics Letters, 1993
- Implantation of 14N+ into Monocrystalline GaN filmsThe International Journal of Applied Radiation and Isotopes, 1975