MoSe 2 layer formation at Cu(In,Ga)Se 2/Mo Interfaces in High Efficiency Cu(In1- xGa x)Se 2 Solar Cells
- 1 January 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (1A), L71-73
- https://doi.org/10.1143/jjap.37.l71
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Chemical and Structural Characterization of Cu(In,Ga)Se2/Mo Interface in Cu(In,Ga)Se2 Solar CellsJapanese Journal of Applied Physics, 1996
- Thin film photovoltaicsApplied Surface Science, 1996
- High-efficiency CuInxGa1−xSe2 solar cells made from (Inx,Ga1−x)2Se3 precursor filmsApplied Physics Letters, 1994
- CuInSe2 for photovoltaic applicationsJournal of Applied Physics, 1991
- Phase relations in the molybdenum-gallium systemJournal of the Less Common Metals, 1973