Determination of surface properties by means of large signal photovoltage pulses and the influence of trapping
- 31 August 1974
- journal article
- Published by Elsevier in Surface Science
- Vol. 44 (2), 421-437
- https://doi.org/10.1016/0039-6028(74)90128-9
Abstract
No abstract availableThis publication has 40 references indexed in Scilit:
- Theoretical origins of Nss peaks observed in Gray-Brown MOS studiesApplied Physics Letters, 1973
- Calculations of Energy Levels of Oxygen and Silicon Vacancies at the Si-SiO2InterfaceJapanese Journal of Applied Physics, 1973
- The E(k) Relation for a Two‐Band Scheme of Semiconductors and the Application to the Metal‐Semiconductor ContactPhysica Status Solidi (b), 1972
- Determination of surface state parameters from surface photovoltage transients: CdSSurface Science, 1972
- Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurementsSurface Science, 1971
- Low-Temperature Reduction of Fast Surface States Associated with Thermally Oxidized SiliconJournal of the Electrochemical Society, 1971
- Characterization of Surface States at the Si-SiO[sub 2] Interface Using the Quasi-Static TechniqueJournal of the Electrochemical Society, 1971
- Determination of interface-state density and mobility ratio in silicon surface inversion layersIEEE Transactions on Electron Devices, 1970
- DENSITY OF SiO2–Si INTERFACE STATESApplied Physics Letters, 1966
- Eigenschaften gewöhnlicher HalbleiteroberflächenPhysica Status Solidi (b), 1962