GaInAsP/InP DH lasers and related fabricating techniques for integration
- 1 August 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 15 (8), 707-710
- https://doi.org/10.1109/jqe.1979.1070100
Abstract
Liquid phase epitaxy and wet chemical etching techniques were investigated for the purpose of obtaining integrated GaxIn1-xAsyP1-y/InP lasers. Selective growth of a GaInAsP layer on channeledKeywords
This publication has 10 references indexed in Scilit:
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