Resistivity, oxidation kinetics and diffusion barrier properties of thin film ZrB2
- 1 September 1984
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 119 (1), 23-30
- https://doi.org/10.1016/0040-6090(84)90154-8
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Oxidation kinetics of ZrN thin filmsThin Solid Films, 1983
- Synthesis and properties of some refractory transition metal diboride thin filmsThin Solid Films, 1983
- VLSI Metallization: Some problems and trendsJournal of Vacuum Science and Technology, 1981
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980
- The synthesis and properties of melted borides of transition metalsJournal of the Less Common Metals, 1979
- Diffusion barriers in thin filmsThin Solid Films, 1978
- Thermogravi metric Study of the Oxidation of ZrB[sub 2] in the Temperature Range of 800° to 1500°CJournal of the Electrochemical Society, 1971