Oxidation kinetics of ZrN thin films
- 1 September 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 107 (1), 111-116
- https://doi.org/10.1016/0040-6090(83)90013-5
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- ZrN diffusion barrier in aluminum metallization schemesThin Solid Films, 1983
- TiN formed by evaporation as a diffusion barrier between Al and SiJournal of Vacuum Science and Technology, 1982
- Oxidation kinetics of TiN thin filmsJournal of Applied Physics, 1981
- Thermal stability of titanium nitride for shallow junction solar cell contactsJournal of Applied Physics, 1981
- Oxidation of tantalum disilicide on polycrystalline siliconJournal of Applied Physics, 1980
- TiN and TaN as diffusion barriers in metallizations to silicon semiconductor devicesApplied Physics Letters, 1980
- Oxidation mechanisms in WSi2 thin filmsApplied Physics Letters, 1978
- Polymorphic Behavior of Thin Evaporated Films of Zirconium and Hafnium OxidesJournal of the American Ceramic Society, 1970
- Oxidation of Zirconium and Zirconium-Oxygen Alloys at 800°CJournal of the Electrochemical Society, 1962
- Diffusion of Oxygen in Zirconium and Its Relation to Oxidation and CorrosionJournal of the Electrochemical Society, 1958