Improved p-channel InAlAs GaAsSb
- 29 February 1996
- journal article
- review article
- Published by Elsevier in Solid-State Electronics
- Vol. 39 (2), 179-191
- https://doi.org/10.1016/0038-1101(95)00154-9
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Temperature dependence of the direct band gap energy and donor–acceptor transition energies in Be-doped GaAsSb lattice matched to InPApplied Physics Letters, 1994
- Comparison of Al and TiPtAu metallisations on a GaAs MESFET with GeMoW ohmic contactsElectronics Letters, 1993
- GaAs/sub x/Sb/sub 1-x//In/sub y/Al/sub 1-y/As p-channel heterostructure FETs with high transconductance and low gate leakage currentIEEE Electron Device Letters, 1993
- Gate current in self-aligned n-channel and p-channel pseudomorphic heterostructure field-effect transistorsIEEE Electron Device Letters, 1991
- Direct-coupled FET logic circuits on InPIEEE Electron Device Letters, 1991
- Microstructure and contact resistance temperature dependence of Pt/Ti ohmic contact to Zn-doped GaAsJournal of Applied Physics, 1990
- Pt/Ti ohmic contacts to ultrahigh carbon-doped p-GaAs formed by rapid thermal processingApplied Physics Letters, 1990
- Band-edge alignment in heterostructuresApplied Physics Letters, 1989
- The potential of complementary heterostructure FET IC'sIEEE Transactions on Electron Devices, 1987
- OMVPE growth of the metastable III/V alloy GaAs0.5Sb0.5Journal of Electronic Materials, 1986